Patent · US Active

Method for making high-K metal gate electrode structures by separate removal of placeholder materials

US8735270B2 · kind B2 · utility

2Cited by

2References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Klaus Hempel · Dresden, DE
Sven Beyer · Dresden, DE
Markus Lenski · Dresden, DE
Stephan Kruegel · Sankt Goar, DE

Key dates

Filing date	May 7, 2013
Grant date	May 27, 2014
Priority date	—
Expiry date	May 7, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/601
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.