Method for etching high-k dielectric using pulsed bias power
US8735291B2 · kind B2 · utility
37Cited by
3References
20Claims
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Key dates
| Filing date | Aug 25, 2011 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Sep 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed on the high-k layer. The method further includes transferring a pattern formed in the gate layer to the high-k layer using a pulsed bias plasma etching process, and selecting a process condition for the pulsed bias plasma etching process to achieve a silicon recess formed in the substrate having a depth less than 2 nanometer (nm).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.