Forming structures on resistive substrates

US8735986B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Alan B. Botula · South Burlington, US
• Renata Camillo-Castillo · South Burlington, US
• James S. Dunn · Jericho, US
• Jeffrey P. Gambino · Gresham, US
• Douglas B. Hershberger · South Burlington, US
• Alvin J. Joseph · Williston, US
• Robert M. Rassel · Colchester, US
• Mark E. Stidham · Bloomington, US

Key dates

• Filing date: Dec 6, 2011
• Grant date: May 27, 2014
• Expiry date: Apr 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/859
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A substrate includes a first region having a first resistivity, for optimizing a field effect transistor, a second region having a second resistivity, for optimizing an npn subcollector of a bipolar transistor device and triple well, a third region having a third resistivity, with a high resistivity for a passive device, a fourth region, substantially without implantation, to provide low perimeter capacitance for devices.