Atomic layer deposition of zirconium oxide for forming resistive-switching materials
US8741698B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 29, 2011 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Nov 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium oxide for use in a variety of electronic devices. Forming the dielectric layer includes depositing zirconium oxide using atomic layer deposition. A method of atomic layer deposition to produce a metal-rich metal oxide comprises the steps of providing a silicon substrate in a reaction chamber, pulsing a zirconium precursor for a predetermined time to deposit a first layer, and oxidizing the first layer with water vapor to produce the metal-rich metal oxide. The metal-rich metal oxide has superior properties for non-volatile resistive-switching memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.