Semiconductor devices with replacement gate structures having conductive contacts positioned therebetween
US8742510B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2012 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Dec 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are various methods of forming replacement gate structures and conductive contacts on semiconductor devices and devices incorporating the same. One exemplary device includes a plurality of gate structures positioned above a semiconducting substrate, at least one sidewall spacer positioned proximate respective sidewalls of the gate structures, and a metal silicide region in a source/drain region of the semiconducting substrate, the metal silicide region extending laterally so as to contact the sidewall spacer positioned proximate each of the gate structures. Furthermore, the device also includes, among other things, a conductive contact positioned between the plurality of gate structures, the conductive contact having a lower portion that conductively contacts the metal silicide region and an upper portion positioned above the lower portion, wherein the lower portion is laterally wider than the upper portion and extends laterally so as to contact the sidewall spacers positioned proximate each of the gate structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.