Thinned wafer and fabricating method thereof
US8754504B2 · kind B2 · utility
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3References
13Claims
0Family size
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Key dates
| Filing date | May 23, 2012 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Aug 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thinning method of a wafer is provided. The method includes the following steps. First, a wafer having a first surface, a second surface, and a side surface is provided, and the side surface is connected between the first surface and the second surface. At least one semiconductor device is formed on the first surface. Then, an anisotropy etching process is performed to the second surface with a mask to remove portions of the wafer while remaining the side surface thereby forming a number of grooves in the second surface and at least one reinforcing wall between the grooves. As a result, a thinned wafer is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.