Repairable semiconductor device and method

US8754522B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thorsten Meyer · Regensburg, DE
• Gerald Ofner · Regensburg, DE

Key dates

• Filing date: Oct 26, 2011
• Grant date: Jun 17, 2014
• Expiry date: Oct 26, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/1461
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Repairable semiconductor device and method. In one embodiment a method, provides a first body having a first semiconductor chip and a first metal layer. A second body includes a second semiconductor chip and a second metal layer. Metal of the first metal layer is removed. The first semiconductor chip is removed from the first body. The second body is attached to the first body. The first metal layer is electrically coupled to the second metal layer.