Copper oxide removal techniques
US8758638B2 · kind B2 · utility
3Cited by
17References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2011 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Nov 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.