Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing material

US8759200B2 · kind B2 · utility

Assignees

• Matheson Tri-Gas, Inc. · US
• International Business Machines Corporation · US

Inventors

• Terry Arthur Francis · Schenectady, US
• Satoshi Hasaka · Tokyo, JP
• Paul Brabant · Phoenix, US
• Robert Torres, Jr. · Parker, US
• Hong He · Schenectady, US
• Alexander Reznicek · Troy, US
• Thomas N. Adam · Slingerlands, US
• Devendra K. Sadana · Pleasantville, US

Key dates

• Filing date: Jun 23, 2011
• Grant date: Jun 24, 2014
• Expiry date: Mar 14, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02636
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.