Semiconductor structure and method for making same

US8759207B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Barth · Munich, DE
• Mathias Vaupel · Regensburg, DE
• Rainer Steiner · Regensburg, DE
• Werner Robl · Regensburg, DE
• Jens Pohl · San Luis Obispo, US
• Joem Plagmann · Munich, DE
• Gottfried Beer · Nittendorf, DE

Key dates

• Filing date: Nov 8, 2012
• Grant date: Jun 24, 2014
• Expiry date: Nov 8, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/15788
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a portion of the seed layer; and selectively depositing a fill layer on the exposed seed layer.