Capacitor dielectric comprising silicon-doped zirconium oxide and capacitor using the same
US8760845B2 · kind B2 · utility
5Cited by
2References
4Claims
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Key dates
| Filing date | Feb 10, 2012 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | May 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02159
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.