Site based quantification of substrate topography and its relation to lithography defocus and overlay
US8768665B2 · kind B2 · utility
11Cited by
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21Claims
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Key dates
| Filing date | May 11, 2010 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | May 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from which defocus and overlay can be derived.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.