Supercritical drying method for semiconductor substrate and supercritical drying apparatus
US8771429B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | May 17, 2032 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF26B2200/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.