Formation of the dielectric cap layer for a replacement gate structure
US8772168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Aug 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gate to contact shorts are reduced by forming dielectric caps in replaced gate structures. Embodiments include forming a replaced gate structure on a substrate, the replaced gate structure including an ILD having a cavity, a first metal on a top surface of the ILD and lining the cavity, and a second metal on the first metal and filling the cavity, planarizing the first and second metals, forming an oxide on the second metal, removing the oxide, recessing the first and second metals in the cavity, forming a recess, and filling the recess with a dielectric material. Embodiments further include dielectric caps having vertical sidewalls, a trapezoidal shape, a T-shape, or a Y-shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.