Semiconductor on glass substrate with stiffening layer
US8772875B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Aug 22, 2013 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Aug 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.