Phase change memory cell structure
US8779408B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Sep 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell described herein includes a memory element comprising programmable resistance memory material overlying a conductive contact. An insulator element includes a pipe shaped portion extending from the conductive contact into the memory element, the pipe shaped portion having proximal and distal ends and an inside surface defining an interior, the proximal end adjacent the conductive contact. A bottom electrode contacts the conductive contact and extends upwardly within the interior from the proximal end to the distal end, the bottom electrode having a top surface contacting the memory element adjacent the distal end at a first contact surface. A top electrode is separated from the distal end of the pipe shaped portion by the memory element and contacts the memory element at a second contact surface, the second contact surface having a surface area greater than that of the first contact surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.