Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
US8779510B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2010 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Dec 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.