Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
US8779537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2013 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Sep 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin transfer torque memory random access memory (STTMRAM) element is capable of switching states when electrical current is applied thereto for storing data and includes the following layers. An anti-ferromagnetic layer, a fixed layer formed on top of the anti-ferromagnetic layer, a barrier layer formed on top of the second magnetic layer of the fixed layer, and a free layer including a first magnetic layer formed on top of the barrier layer, a second magnetic layer formed on top of the first magnetic layer, a nonmagnetic insulating layer formed on top of the second magnetic layer and a third magnetic layer formed on top of the non-magnetic insulating layer. A capping layer is formed on top of the non-magnetic insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.