Method for cleaning platinum residues on a semiconductor substrate
US8784572B2 · kind B2 · utility
0Cited by
6References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 19, 2011 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Oct 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.