Patent · US Active

Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

US8786040B2 · kind B2 · utility

10Cited by

0References

28Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Brian S. Doyle · Portland, US
David L. Kencke · Beaverton, US
Charles C. Kuo · Hillsboro, US
Uday Shah · Portland, US
Kaan Oguz · Beaverton, US
Mark L. Doczy · Beaverton, US
Satyarth Suri · Hillsboro, US
Clair Webb · Beaverton, US

Key dates

Filing date	Dec 21, 2012
Grant date	Jul 22, 2014
Priority date	—
Expiry date	Dec 21, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.