Semiconductor device with chip having low-k-layers

US8786105B1 · kind B1 · utility

Assignee

• Intel Mobile Communications GmbH · DE

Inventors

• Thorsten Meyer · Regensburg, DE
• Sven Albers · Regensburg, DE
• Christian Geissler · Teugn, DE
• Andreas Wolter · Regensburg, DE
• Markus Brunnbauer · Lappersdorf, DE
• David O'Sullivan · Ottobrunn, DE
• Frank Zudock · Regensburg, DE
• Jan Proschwitz · Riesa, DE

Key dates

• Filing date: Jan 11, 2013
• Grant date: Jul 22, 2014
• Expiry date: Jan 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device is described having at least one semiconductor chip, the chip having an active area on a top side thereof, the active area formed at least in part of low-k material, said low-k material defining a low-k subarea of said active area; an embedding material, in which said at least one semiconductor chip is embedded, at least part of the embedding material forming a coplanar area with said active area; at least one contact area within the low-k subarea; a redistribution layer on the coplanar area, the redistribution layer connected to said contact areas; at least one first-level interconnect, located outside said low-k subarea, the first-level interconnect electrically connected to at least one of said contact areas via the redistribution layer.