Patent · US Active

Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal features

US8790975B2 · kind B2 · utility

2Cited by

3References

22Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Peter Baars · Dresden, DE
Till Schloesser · Dresden, DE
Vivien Schroeder · Radeberg, DE

Key dates

Filing date	Mar 4, 2011
Grant date	Jul 29, 2014
Priority date	—
Expiry date	Feb 20, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/601
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with “regular” metal features, thereby achieving a very efficient overall process flow. At a certain manufacturing stage, the metal of the placeholder metal region may be removed on the basis of a wet chemical etch recipe followed by the deposition of the electrode materials and the dielectric materials for the capacitive structure without unduly affecting other portions of the metallization system. In this manner, very high capacitance values may be realized on the basis of a very efficient overall manufacturing flow.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.