Inventor · Radeberg, DE

Vivien Schroeder

7Patents

3h-index

14Co-inventors

43Inventor score

Filing activity: May 21, 2010 → Sep 21, 2012

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8247281B2	Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers	Electricity	9	Active
US8679924B2	Self-aligned multiple gate transistor formed on a bulk substrate	Electricity	6	Active
US8298894B2	Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer	Electricity	5	Active
US8440559B2	Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layer	Electricity	2	Active
US8790975B2	Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal features	Electricity	2	Active
US8883586B2	Mol insitu Pt rework sequence	Electricity	0	Active
US8357575B2	Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.