Dual metal fill and dual threshold voltage for replacement gate metal devices
US8796128B2 · kind B2 · utility
9Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2012 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Feb 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and method for forming a dual metal fill and dual threshold voltage for replacement gate metal devices is disclosed. A selective deposition process involving titanium and aluminum is used to allow formation of two adjacent transistors with different fill metals and different workfunction metals, enabling different threshold voltages in the adjacent transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.