Methods of fabricating substrates
US8796155B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2008 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Jun 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first material is deposited over the altered material, and is of some different composition from that of the altered material. The first material is etched to expose the altered material and spaced second features comprising the first material are formed on sidewalls of the altered material. Then, the altered material is etched from between the spaced second features and the spaced first features. The substrate is processed through a mask pattern comprising the spaced first features and the spaced second features. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.