Multi-gate field-effect transistor and process thereof
US8796695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2012 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Jul 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/751
Abstract
A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from bottom to top. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.