Method and apparatus for plasma dicing a semi-conductor wafer
US8802545B2 · kind B2 · utility
11Cited by
52References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2012 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Mar 5, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.