Method of hard mask CD control by Ar sputtering
US8802571B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Nov 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching features into a silicon based etch layer through a patterned hard mask in a plasma processing chamber is provided. A silicon sputtering is provided to sputter silicon from the silicon based etch layer onto sidewalls of the patterned hard mask to form sidewalls on the patterned hard mask. The etch layer is etched through the patterned hard mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.