Method of patterning a low-k dielectric film
US8802572B2 · kind B2 · utility
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Key dates
| Filing date | Jun 20, 2013 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
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