Methods for beam current modulation by ion source parameter modulation
US8803110B2 · kind B2 · utility
0Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2006 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Nov 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.