Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability
US8804137B2 · kind B2 · utility
2Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2010 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Apr 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.