Dry metal etching method
US8808562B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2011 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Oct 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32247
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of etching an aluminum-containing layer on a substrate is described. The method includes forming plasma from a process composition containing a halogen element, and exposing the substrate to the plasma to etch the aluminum-containing layer. The method may additionally include exposing the substrate to an oxygen-containing environment to oxidize a surface of the aluminum-containing layer and control an etch rate of the aluminum-containing layer. The method may further include forming first plasma from a process composition containing HBr and an additive gas having the chemical formula CxHyRz (wherein R is a halogen element, x and y are equal to unity or greater, and z is equal to zero or greater), forming second plasma from a process composition containing HBr, and exposing the substrate to the first plasma and the second plasma to etch the aluminum-containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.