Radiation enhanced resistive switching layers
US8809159B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 20, 2012 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Dec 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
Provided are radiation enhanced resistive switching layers, resistive random access memory (ReRAM) cells including these layers, as well as methods of forming these layers and cells. Radiation creates defects in resistive switching materials that allow forming and breaking conductive paths in these materials thereby improving their resistive switching characteristics. For example, ionizing radiation may break chemical bonds in various materials used for such a layer, while non-ionizing radiation may form electronic traps. Radiation power, dozing, and other processing characteristics can be controlled to generate a distribution of defects within the resistive switching layer. For example, an uneven distribution of defects through the thickness of a layer may help with lowering switching voltages and/or currents. Radiation may be performed before or after thermal annealing, which may be used to control distribution of radiation created defects and other types of defects in resistive switching layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.