Patent · US Active

Method for fusing a laser fuse and method for processing a wafer

US8809165B2 · kind B2 · utility

0Cited by

2References

30Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gunther Mackh · Dresden, DE
Gerhard Leschik · Regensburg, DE

Key dates

Filing date	Aug 27, 2012
Grant date	Aug 19, 2014
Priority date	—
Expiry date	Aug 27, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fusing a laser fuse in accordance with various embodiments may include: providing a semiconductor workpiece having a substrate region and at least one laser fuse; fusing the at least one laser fuse from a back side of the substrate region by means of an infrared laser beam.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.