Leakage barrier for GaN based HEMT active device
US8809907B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2006 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Mar 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
An improved HEMT formed from a GaN material system is disclosed which has reduced gate leakage current relative to known GaN based HEMTs and eliminates the problem of current constrictions resulting from deposition of the gate metal over the step discontinuities formed over the gate mesa. The HEMT device is formed from a GaN material system. One or more GaN based materials are layered and etched to form a gate mesa with step discontinuities defining source and drain regions. In order to reduce the leakage current, the step discontinuities are back-filled with an insulating material, such as silicon nitride (SiN), forming a flat surface relative to the source and drain regions, to enable to the gate metal to lay flat. By back-filling the source and drain regions with an insulating material, leakage currents between the gate and source and the gate and drain are greatly reduced. In addition, current constrictions resulting from the deposition of the gate metal over a step discontinuity are virtually eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.