Diamond SOI with thin silicon nitride layer and related methods
US8815641B2 · kind B2 · utility
4Cited by
3References
9Claims
0Family size
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Key dates
| Filing date | Mar 9, 2010 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Apr 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for a semiconductor device including a thin nitride layer formed between a diamond SOI layer and device silicon layer to block diffusion of ions and improve lifetime of the device silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.