Methods of forming semiconductor devices
US8815706B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Oct 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with an embodiment of the present invention, a method of fabricating a semiconductor device includes forming a trench from a top surface of a substrate having a device region. The device region is adjacent to the top surface than an opposite bottom surface. The trench surrounds the sidewalls of the device region. The trench is filled with an adhesive. An adhesive layer is formed over the top surface of the substrate. A carrier is attached with the adhesive layer. The substrate is thinned from the bottom surface to expose at least a portion of the adhesive and a back surface of the device region. The adhesive layer is removed and adhesive is etched to expose a sidewall of the device region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.