Substrate plasma processing apparatus and plasma processing method
US8821684B2 · kind B2 · utility
41Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Jan 30, 2009 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | May 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.