Method for making conductive interconnects

US8822329B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Rainer Leuschner · Regensburg, DE
• Gunther Mackh · Dresden, DE
• Uwe Seidel · Munich, DE

Key dates

• Filing date: Sep 28, 2009
• Grant date: Sep 2, 2014
• Expiry date: May 2, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One or more embodiments relate to a method for making a semiconductor structure, the method including: forming a first conductive interconnect at least partially through the substrate; and forming a second conductive interconnect over the substrate, wherein the first conductive interconnect and the second conductive interconnect are formed at least partially simultaneously.