Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same
US8823012B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2012 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Aug 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Enhancement-mode GaN devices having a gate spacer, a gate metal material and a gate compound that are self-aligned, and a methods of forming the same. The materials are patterned and etched using a single photo mask, which reduces manufacturing costs. An interface of the gate spacer and the gate compound has lower leakage than the interface of a dielectric film and the gate compound, thereby reducing gate leakage. In addition, an ohmic contact metal layer is used as a field plate to relieve the electric field at a doped III-V gate compound corner towards the drain contact, which leads to lower gate leakage current and improved gate reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.