III-N material grown on AIO/AIN buffer on Si substrate
US8823025B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2013 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Mar 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
III-N material grown on a silicon substrate includes a single crystal buffer positioned on a silicon substrate. The buffer is substantially crystal lattice matched to the surface of the silicon substrate and includes aluminum oxynitride adjacent the substrate and aluminum nitride adjacent the upper surface. A first layer of III-N material is positioned on the upper surface of the buffer. An inter-layer of aluminum nitride (AlN) is positioned on the first III-N layer and an additional layer of III-N material is positioned on the inter-layer. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.