REO/ALO/A1N template for III-N material growth on silicon
US8823055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2012 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Dec 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a template on a silicon substrate includes providing a single crystal silicon substrate. The method further includes epitaxially depositing a layer of rare earth oxide on the surface of the silicon substrate. The rare earth oxide being substantially crystal lattice matched to the surface of the silicon substrate. The method further includes forming an aluminum oxide layer on the rare earth oxide, the aluminum oxide being substantially crystal lattice matched to the surface of the rare earth oxide and epitaxially depositing a layer of aluminum nitride (AlN) on the aluminum oxide layer substantially crystal lattice matched to the surface of the aluminum oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.