Method for improving thermal stability of metal gate
US8835294B2 · kind B2 · utility
7Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2010 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Nov 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure on the substrate, the gate structure including a dummy gate, removing the dummy gate from the gate structure thereby forming a trench, forming a work function metal layer partially filling the trench, forming a fill metal layer filling a remainder of the trench, performing a chemical mechanical polishing (CMP) to remove portions of the metal layers outside the trench, and implanting Si, C, or Ge into a remaining portion of the fill metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.