Method of fabricating a profile control in interconnect structures

US8835305B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Chih-Chao Yang · Glenmont, US
• Shyng-Tsong Chen · Rensselaer, US
• Samuel S. Choi · Hopewell Junction, US
• Steven J. Holmes · Colchester, US
• David V. Horak · South Burlington, US
• Charles W. Koburger, III · Delmar, US
• Wai-Kin Li · Hopewell Junction, US
• Christopher J. Penny · Saratoga Springs, US
• Shom Ponoth · Irvine, US
• Yunpeng Yin · Guilderland, US

Key dates

• Filing date: Jul 31, 2012
• Grant date: Sep 16, 2014
• Expiry date: Jul 31, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The profile of a via can be controlled by forming a profile control liner within each via opening that is formed into a dielectric material prior to forming a line opening within the dielectric material. The presence of the profile control liner within each via opening during the formation of the line opening prevents rounding of the corners of a dielectric material portion that is present beneath the line opening and adjacent the via opening.