Source and drain doping using doped raised source and drain regions

US8835936B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jan Hoentschel · Dresden, DE
• Stefan Flachowsky · Dresden, DE
• Ralf Illgen · Dresden, DE

Key dates

• Filing date: Nov 15, 2012
• Grant date: Sep 16, 2014
• Expiry date: Nov 15, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method comprises providing a semiconductor structure comprising a substrate, an electrically insulating layer on the substrate and a semiconductor feature on the electrically insulating layer. A gate structure is formed on the semiconductor feature. An in situ doped semiconductor material is deposited on portions of the semiconductor feature adjacent the gate structure. Dopant is diffused from the in situ doped semiconductor material into the portions of the semiconductor feature adjacent the gate structure, the diffusion of the dopant into the portions of the semiconductor feature adjacent the gate structure forming doped source and drain regions in the semiconductor feature.