IIIOxNy on single crystal SOI substrate and III n growth platform
US8835955B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2011 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Nov 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIOxNy formed on the engineered single crystal silicon layer. In some embodiments the III material in the insulator layer includes more than on III material. In a preferred embodiment the single crystal rare earth oxide includes Gd2O3 and the single crystal insulator layer of IIIOxNy includes one of AlOxNy and AlGaOxNy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.