Semiconductor structure and process thereof
US8836049B2 · kind B2 · utility
23Cited by
22References
12Claims
0Family size
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Key dates
| Filing date | Jun 13, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Jun 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a work function metal layer, a (work function) metal oxide layer and a main electrode. The work function metal layer is located on a substrate. The (work function) metal oxide layer is located on the work function metal layer. The main electrode is located on the (work function) metal oxide layer. Moreover a semiconductor process forming said semiconductor structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.