Magnetic tunnel junction with non-metallic layer adjacent to free layer

US8836061B2 · kind B2 · utility

Assignee

• Avalanche Technology, Inc. · US

Inventors

• Yuchen Zhou · San Jose, US
• Yiming Huai · Pleasanton, US
• Zihui Wang · Milpitas, US
• Dong Ha Jung · Pleasanton, US

Key dates

• Filing date: Jun 6, 2013
• Grant date: Sep 16, 2014
• Expiry date: Jun 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10

Abstract

A spin transfer torque magnetic random access memory (STTMRAM) magnetic tunnel junction (MTJ) stack includes layers to which when electric current is applied cause switching of the direction of magnetization of at least one of the layer. The STTMRAM MTJ stack includes a reference layer (RL) with a direction of magnetization that is fixed upon manufacturing of the STTMRAM MTJ stack, a junction layer (JL) formed on top of the RL, a free layer (FL) formed on top of the JL. The FL has a direction of magnetization that is switchable relative to that of the RL upon the flow of electric current through the spin transfer torque magnetic random access memory (STTMRAM) magnetic tunnel junction (MTJ) stack. The STTMRAM MTJ stack further includes a spin confinement layer (SCL) formed on top of the FL, the SCL made of ruthenium.