Inventor · Milpitas, CA, US

Zihui Wang

55Patents
5h-index
23Co-inventors
68Inventor score

Filing activity: Feb 22, 2012 → Mar 22, 2025

Most-cited inventions

PatentTitleAreaCited byStatus
US9608038B2 Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer Electricity 37 Active
US9070855B2 Magnetic random access memory having perpendicular enhancement layer Electricity 37 Active
US8885395B2 Magnetoresistive logic cell and method of use Electricity 12 Active
US8891291B2 Magnetoresistive logic cell and method of use Emerging Cross-Sectional Technologies 10 Active
US9748471B2 Perpendicular magnetic memory element having magnesium oxide cap layer Electricity 5 Active
US9166146B2 Electric field assisted MRAM and method for using the same Physics 5 Active
US9252187B2 Devices and methods for measurement of magnetic characteristics of MRAM wafers using magnetoresistive test strips Physics 5 Active
US10153017B2 Method for sensing memory element coupled to selector device Electricity 5 Active
US8806284B2 Method for bit-error rate testing of resistance-based RAM cells using a reflected signal Physics 4 Active
US9070692B2 Shields for magnetic memory chip packages Electricity 4 Active
US10008663B1 Perpendicular magnetic fixed layer with high anisotropy Electricity 4 Active
US9082951B2 Magnetic random access memory with perpendicular enhancement layer Performing Operations; Transporting 4 Active
US8836061B2 Magnetic tunnel junction with non-metallic layer adjacent to free layer Electricity 4 Active
US9647032B2 Spin-orbitronics device and applications thereof Electricity 3 Active
US8611145B2 Spin-transfer torque magnetic random access memory (STTMRAM) device with shared transistor and minimal written data disturbance Physics 3 Active
US9306154B2 Magnetic random access memory with perpendicular enhancement layer Performing Operations; Transporting 3 Active
US9502092B2 Unipolar-switching perpendicular MRAM and method for using same Electricity 3 Active
US8879309B2 Method and apparatus for programming a spin-transfer torque magnetic random access memory (STTMRAM) array Physics 2 Active
US9679625B2 Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer Electricity 2 Active
US10720469B2 Multilayered seed structure for magnetic memory element including a CoFeB seed layer Electricity 2 Active
US10032979B2 Magnetic memory element with iridium anti-ferromagnetic coupling layer Performing Operations; Transporting 2 Active
US10950659B2 Multilayered seed for perpendicular magnetic structure Electricity 2 Active
US9871191B2 Magnetic random access memory with ultrathin reference layer Electricity 2 Active
US10090456B2 Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer Electricity 2 Active
US9396781B2 Magnetic random access memory having perpendicular composite reference layer Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.