Magnetic memory cell and magnetic random access memory
US8837209B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 17, 2011 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Aug 26, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A relation between a drive current of a selection transistor of a magnetic memory and a threshold magnetization switching current of the magnetoresistance effect element is optimized. In order to optimize the relation between the drive current of the selection transistor and the threshold magnetization switching current of the magnetoresistance effect element 101 of the magnetic memory cell, a mechanism 601-604 for dropping the threshold magnetization switching current on “1” writing is provided that applies a magnetic field that is in the inverse direction of the pinned layer to the recording layer of the magnetoresistance effect element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.